Energy relaxation probed by weak antilocalization measurements in GaN heterostructures
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چکیده
منابع مشابه
The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates
In the present study, we reported the results of the investigation of electrical and optical measurements in AlxGa1−xN /GaN heterostructures x=0.20 that were grown by way of metal-organic chemical vapor deposition on sapphire and SiC substrates with the same buffer structures and similar conditions. We investigated the substrate material effects on the electrical and optical properties of Al0.2...
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تاریخ انتشار 2016